Binary amorphous alloy system Mn_100-xCe_x has been fabricated by a dc-sputtering deposition with various Ce compositions ranging from x = 20 to 80. Temperature dependence of electrical resistivity for Ce-rich side of amorphous Mn_100-xCe_x alloy, especially in Mn₂₁Ce₇₉, exhibits a large initial increase with T²-like behavior at low temperature side up to about 7 K followed by a quite rapid logarithmic-like decrease with the increase of temperature. In contrast, amorphous Mn₇₅Ce₂₅ alloy shows only monotonic decrease in the resistivity with increasing temperature. These results reveal a clear evidence of a dense Kondo behavior for Ce rich side.

PACS numbers: 71.27.+a, 72.15.Eb