Yb4Sb3 is known to show a valence fluctuation state, which is considered to relate with the high temperature phase of Yb4As3. To clarify an electronic state of Yb4Sb3, we tried to grow its high-quality single crystal and measure the de Haas--van Alphen effect. The residual resistivity ratio of the obtained single crystal was 500 and five dHvA branches were detected. Their cyclotron effective masses were in the range from 1.8m0 to 10m0.
PACS numbers: 71.18.+y, 75.30.Mb
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