We present a study of the susceptibility and electronic transport properties of the alloying series URh2Ge2-xSnx, x \leq 0.1. The magnetic behavior varies as function of x from an antiferromagnetic to a spin glass ground state. In contrast, the electronic transport does not correspondingly reflect the modification of the magnetic ground state properties. Instead, we argue that it indicates diffusive transport for all samples, possibly related to disorder induced electronic localization.
PACS numbers: 72.80.Ng, 72.15.Qm, 75.50.Ee, 75.50.Lk
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