Conductance through a system consisting of a wire with two side-attached quantum dots is calculated. Both the quantum dots take part in destructive interference with ballistic channel through the wire. Such geometry of the device allows to control the strength of the quantum interference and suppression of the conductance through the system. The minimum present in the gate voltage characteristics of the conductance can be turned into plateau. We propose an experimental setup where the strength of the quantum interference can be smoothly controlled by changing the level positions inside quantum dots by appropriate gate voltages.

PACS numbers: 72.15.Qm, 73.63.--b